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| NTE2339 Silicon NPN Transistor High Voltage, High Speed Switch Features: D High Breakdown Voltage, High Reliability D Fast Switching Speed D Wide Safe Operating Area Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1100V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Collector Dissipation (TC = +25C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Note 1. Pulse Width 300s, Duty Cycle 10%. Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Output Capacitance Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Symbol ICBO IEBO hFE (1) hFE (2) fT Cob VBE(sat) Test Conditions VCB = 800V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 200mA VCE = 5V, IC = 1A VCE = 10V, IC 200mA VCB = 10V, f = 1MHz IC = 1.5A, IB = 300mA Min - - 20 8 - - - - Typ - - - - 15 60 - - Max 10 10 40 - - - 2.0 1.5 MHz pF V V Unit A A VCE(sat) IC = 1.5A, IB = 300mA Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Symbol Test Conditions Min 1100 800 7 800 - VCC = 400V, IB1 = -2.5A, IB2 =IC = 2A, RL = 200 - - Typ - - - - - - - Max - - - - 0.5 3.0 0.3 Unit V V V V s s s V(BR)CBO IC = 1mA, IE = 0 V(BR)EBO IE = 1mA, IC = 0 Collector-Emitter Breakdown Voltage V(BR)CEO IC = 5mA, RBE = Collector-Emitter Sustaining Voltage VCEX(sus) IC = 1.5A, IB1 = IB2 = 300mA, L = 2mH, Clamped Turn-On Time Storage Time Fall Time ton tstg tf .402 (10.2) Max .224 (5.7) Max .122 (3.1) Dia .295 (7.5) .669 (17.0) Max .165 (4.2) .173 (4.4) Max .114 (2.9) Max B C E .531 (13.5) Min .100 (2.54) .059 (1.5) Max NOTE: Tab is isolated |
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